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oH VE S CO AV R M AI SIO PL LA N IA BL S NT E
TISP7070H3SL THRU TISP7095H3SL, TISP7125H3SL THRU TISP7220H3SL, TISP7250H3SL THRU TISP7400H3SL TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
*R
TISP7xxxH3SL Overvoltage Protector Series
TISP7xxxH3SL Overview
This TISP(R) device series protects central office, access and customer premise equipment against overvoltages on the telecom line. The TISP7xxxH3SL has the same symmetrical bidirectional protection on any terminal pair; R-T, R-G and T-G. In addition, the device is rated for simultaneous R-G and T-G impulse conditions. The TISP7xxxH3SL is available in a wide range of voltages and has a high current capability, allowing minimal series resistance to be used. These protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950, IEC 60950, ITU-T K.20, K.21 and K.45. The TISP7350H3SL meets the FCC Part 68 "B" ringer voltage requirement and survives both Type A and B impulse tests. These devices are housed in a through-hole 3-pin single-in-line (SL) plastic package.
Summary Electrical Characteristics
VDRM V(BO) VT @ IT V V V TISP7070H3 58 70 3 TISP7080H3 65 80 3 TISP7095H3 75 95 3 TISP7125H3 100 125 3 TISP7135H3 110 135 3 TISP7145H3 120 145 3 TISP7165H3 130 165 3 TISP7180H3 145 180 3 TISP7200H3 150 200 3 TISP7210H3 160 210 3 TISP7220H3 170 220 3 TISP7250H3 200 250 3 TISP7290H3 230 290 3 TISP7300H3 230 300 3 TISP7350H3 275 350 3 TISP7400H3 300 400 3 Bourns' part has an improved protection voltage Part # IDRM A 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 I(BO) mA 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 IT A 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 IH mA 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 Co @ -2 V pF 140 140 140 74 74 74 74 74 74 74 74 62 62 62 62 62 Functionally Replaces
P1553AC P1803AC P2103AC P2353AC P2703AC P3203AC P3403AC
Summary Current Ratings
Parameter Waveshape Value 2/10 500 1.2/50, 8/20 350 10/160 250 ITSP A 5/320 200 10/560 130 10/1000 100 ITSM A 1 cycle 60 Hz 60 di/dt A/s 2/10 Wavefront 400
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex MARCH 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP7xxxH3SL Overvoltage Protector Series
ITU-T K.20/21 Rating . . . . . . . . 8 kV 10/700, 200 A 5/310 Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
SL Package (Top View)
T G R
1 2 3 MDXXAGA
Device `7070 `7080 `7095 `7125 `7135 `7145 `7165 `7180 `7200 `7210 `7220 `7250 `7290 `7350 `7400
VDRM V 58 65 75 100 110 120 130 145 150 160 170 200 230 275 300
V(BO) V 70 80 95 125 135 145 165 180 200 210 220 250 290 350 400
Device Symbol
T R
SD7XAB
Rated for International Surge Wave Shapes - Single and Simultaneous Impulses
G Terminals T, R and G correspond to the alternative line designators of A, B and C
Waveshape 2/10 s 8/20 s 10/160 s 10/700 s 10/560 s 10/1000 s
Standard GR-1089-CORE IEC 61000-4-5 FCC Part 68 FCC Part 68 ITU-T K.20/21 FCC Part 68 GR-1089-CORE
ITSP A 500 350 250 200 130 100
3-Pin Through-Hole Packaging - Compatible with TO-220AB pin-out -Low Height .................................................................... 8.3 mm Low Differential Capacitance ....................................... < 72 pF .............................................. UL Recognized Component
Description
The TISP7xxxH3SL limits overvoltages between the telephone line Ring and Tip conductors and Ground. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. Each terminal pair, T-G, R-G and T-R, has a symmetrical voltage-triggered bidirectional thyristor protection characteristic. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.
How To Order
For Standard Termination Finish Order As TISP7xxxH3SL For Lead Free Termination Finish Order As TISP7xxxH3SL-S
Device TISP7xxxH3
Package SL (Single-in-Line)
Carrier Tube
Insert xxx value corresponding to protection voltages of 070, 080, 095, 125 etc.
MARCH 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP7xxxH3SL Overvoltage Protector Series
Description (continued)
This TISP7xxxH3SL range consists of fifteen voltage variants to meet various maximum system voltage levels (58 V to 300 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high current protection devices are in a 3-pin single-in-line (SL) plastic package and are supplied in tube pack. For alternative impulse rating, voltage and holding current values in SL packaged protectors, consult the factory. For lower rated impulse currents in the SL package, the 45 A 10/1000 TISP7xxxF3SL series is available. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Rating `7070 `7080 `7095 `7125 `7135 `7145 `7165 `7180 `7200 `7210 `7220 `7250 `7290 `7350 `7400 Symbol Value 58 65 75 100 110 120 130 145 150 160 170 200 230 275 300 500 350 250 225 200 200 200 130 100 55 60 0.9 400 -40 to +150 -65 to +150 Unit
Repetitive peak off-state voltage, (see Note 1)
VDRM
V
Non-repetitive peak on-state pulse current (see Notes 2, and 3) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 8/20 s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 current combination wave generator) 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 4/250 (ITU-T K.20/21, 10/700 voltage wave shape, dual) 0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape) 5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 5/320 s (FCC Part 68, 9/720 s voltage wave shape) 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 4) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 200 A Junction temperature Storage temperature range
ITSP
A
ITSM diT/dt TJ Tstg
A A/s C C
NOTES: 1. Derate value at -0.13%/C for temperatures below 25 C. 2. Initially the TISP7xxxH3 must be in thermal equilibrium. 3. These non-repetitive rated currents are peak values of either polarity. The rated current values may be applied to any terminal pair. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G terminal return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the TISP7xxxH3 returns to its initial conditions. 4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Derate current values at -0.61 %/C for ambient temperatures above 25 C.
MARCH 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP7xxxH3SL Overvoltage Protector Series
Electrical Characteristics for any Terminal Pair, TA = 25 C (Unless Otherwise Noted)
Parameter Repetitive peak offstate current Test Conditions VD = VDRM TA = 25 C TA = 85 C `7070 `7080 `7095 `7125 `7135 `7145 `7165 `7180 `7200 `7210 `7220 `7250 `7290 `7350 `7400 `7070 `7080 `7095 `7125 `7135 `7145 `7165 `7180 `7200 `7210 `7220 `7250 `7290 `7350 `7400 0.1 0.15 5 TA = 85 C 10 Min Typ Max 5 10 70 80 95 125 135 145 165 180 200 210 220 250 290 350 400 78 88 103 134 144 154 174 189 210 220 231 261 302 362 414 0.8 5 0.6 Unit A
IDRM
V(BO)
Breakover voltage
dv/dt = 750 V/ms,
RSOURCE = 300
V
V(BO)
Impulse breakover voltage
dv/dt 1000 V/s, Linear voltage ramp, Maximum ramp value = 500 V di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A
V
I(BO) VT IH dv/dt ID
Breakover current On-state voltage Holding current Critical rate of rise of off-state voltage Off-state current
dv/dt = 750 V/ms, RSOURCE = 300 IT = 5 A, tW = 100 s IT = 5 A, di/dt = - /+30 mA/ms Linear voltage ramp, Maximum ramp value < 0.85VDRM VD = 50 V
A V A kV/s A
MARCH 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP7xxxH3SL Overvoltage Protector Series
Electrical Characteristics for any Terminal Pair, T A = 25 C (Unless Otherwise Noted)
A Parameter f = 1 MHz, Test Conditions Vd = 1 V rms, VD = 0, Min `7070 thru `7095 `7125 thru `7220 `7250 thru `7400 `7070 thru `7095 `7125 thru `7220 `7250 thru `7400 `7070 thru `7095 `7125 thru `7220 `7250 thru `7400 `7070 thru `7095 `7125 thru `7220 `7250 thru `7400 `7125 thru `7220 `7250 thru `7400 Typ Max 170 90 84 150 79 67 140 74 62 73 35 28 33 26 Unit
f = 1 MHz,
Vd = 1 V rms, VD = -1 V
Coff
Off-state capacitance
f = 1 MHz,
Vd = 1 V rms, VD = -2 V
pF
f = 1 MHz,
Vd = 1 V rms, VD = -50 V
f = 1 MHz, Vd = 1 V rms, VD = -100 V (see Note 5) NOTE 5: To avoid possible voltage clipping, the `7125 is tested with VD = -98 V.
Thermal Characteristics
Parameter R JA NOTE Junction to free air thermal resistance Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 C, (see Note 6) Min Typ Max 50 Unit C/W
6: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
MARCH 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP7xxxH3SL Overvoltage Protector Series
Parameter Measurement Information
+i ITSP Quadrant I Switching Characteristic
ITSM IT VT IH V(BO) I(BO)
-v IDRM
VDRM
VD
ID ID VD VDRM
IDRM +v
I(BO) V(BO)
IH VT IT ITSM
Quadrant III Switching Characteristic ITSP -i VD = 50 V and ID = 10 A used for reliability release
PM4XAAC
Figure 1. Voltage-current Characteristic for Terminal Pairs
MARCH 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP7xxxH3SL Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT vs JUNCTION TEMPERATURE NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC7AABA
10 VD = +50 V
TC7AAA
1.10
'7125 THRU '7220
Normalized Breakover Voltage
1
|ID| - Off-State Current - A
'7250 THRU '7400
0*1
VD = -50 V
1.05
'7070 THRU '7095 '7250 THRU '7400
0*01
1.00
0*001
0*0001 0 25 50 75 100 125 TJ - Junction Temperature - C 150
0.95 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
Figure 2.
Figure 3.
ON-STATE CURRENT
Breakover Current Normalized to 25 C Holding Current
NORMALIZED BREAKOVER CURRENT vs vs ON-STATE VOLTAGE TC7AADA JUNCTION TEMPERATURE NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE
TC7AAC
4.0 200 150 TA = 25 C 3.0 100 tW = 100 s 70 50 2.0 40 30 1.5 20 15 '3125 THRU '3210
2.0
+ I(BO), - I(BO) '7070 THRU '7220 1.5
Normalized Holding Current
1.0 0.9 0.8 0.7 0.6 0.5 0.4
10 1.0 7 0.9 5 0.8 4 0.7 3 0.6 2 0.5 1.5
+ I(BO), - I(BO) '7250 THRU '7400 '3250 THRU '3350 '3070 THRU '3095 5 0 1.5 252 50 3 1 754 100 7 125 TJ -TJunction Temperature - C V - On-State Voltage - V 0 150
1 0.4 0.7 -251
-25
0
25
50
75
100
125
150
TJ - Junction Temperature - C
Figure 4.
Figure 5.
MARCH 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP7xxxH3SL Overvoltage Protector Series
Typical Characteristics
NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE 1 0.9
Capacitance Normalized to VD = -1V
TC7AAIA
'7125 '7135 '7145 '7165 '7180 '7200 '7210 '7220
'7070 '7080 '7095
'7250
'7290
0.8 0.7 0.6 0.5 '7070 THRU '7095 0.4
TJ = 25C Vd = 1 Vrms
C - Differential Off-State Capacitance - pF
75 70 65 60 55 50 45 40 35
C = Coff(-2 V) - Coff(-50 V)
'7125 THRU '7220 0.3 '7250 THRU '7400
0.2 1 2 3 5 10 20 30 50 VD - Off-state Voltage - V 100 150
30 50 60 70 80 100 150 200 250 300 VDRM - Repetitive Peak Off-State Voltage - V
'7350 '7400
400
Figure 6.
Figure 7.
MARCH 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TC7AAHA
80
DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETIVE PEAK OFF-STATE VOLTAGE
TISP7xxxH3SL Overvoltage Protector Series
Rating and Thermal Information
NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION TI7AB VGEN = 600 V rms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB, TA = 25 C SIMULTANEOUS OPERATION OF R AND T TERMINALS. G TERMINAL CURRENT = 2xITSM(t)
30
ITSM(t) - Non-Repetitive Peak On-State Current - A
20 15 10 9 8 7 6 5 4 3 2 1.5 1 0.9 0.8 0*1
1
10
100
1000
t - Current Duration - s
Figure 8.
VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE 1.00 0.99 0.98
TI7AACA
IMPULSE RATING vs AMBIENT TEMPERATURE 700 600 500 IEC 1.2/50, 8/20 400 TELCORDIA 2/10
TC7HAA
Impulse Current - A
Derating Factor
300 250 200 150 120
FCC 10/160 ITU-T 10/700
0.97 0.96 0.95
'7070 THRU '7095
FCC 10/560
'7125 THRU '7220 0.94 '7250 THRU '7400 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TAMIN - Minimum Ambient Temperature - C
TELCORDIA 10/1000 100 90 80 70 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 TA - Ambient Temperature - C
Figure 9.
Figure 10.
MARCH 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP7xxxH3SL Overvoltage Protector Series
APPLICATIONS INFORMATION
Deployment
These devices are three terminal overvoltage protectors. They limit the voltage between three points in the circuit. Typically, this would be the two line conductors and protective ground (Figure 11).
Th3 Th1 Th2
Figure 11. MULTI-POINT PROTECTION
In Figure 11, protectors Th2 and Th3 limit the maximum voltage between each conductor and ground to the V(BO) of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its V(BO) value. Manufacturers are being increasingly required to design in protection coordination. This means that each protector is operated at its design level and currents are diverted through the appropriate protector, e.g. the primary level current through the primary protector and lower levels of current may be diverted through the secondary or inherent equipment protection. Without coordination, primary level currents could pass through the equipment only designed to pass secondary level currents. To ensure coordination happens with fixed voltage protectors, some resistance is normally used between the primary and secondary protection. The values given in this data sheet apply to a 400 V (d.c. sparkover) gas discharge tube primary protector and the appropriate test voltage when the equipment is tested with a primary protector.
Impulse Testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms. The table below shows some common values.
Peak Current Current TISP7xxxH3 Series Value Waveform 25 C Rating Resistance Waveform A s A s 2500 2/10 500 2/10 500 GR-1089-CORE 0 1000 10/1000 100 10/1000 100 1500 10/160 200 10/160 250 800 10/560 100 10/560 130 FCC Part 68 0 1000 9/720 25 5/320 200 (March 1998) 1500 (SINGLE) 37.5 5/320 200 1500 (DUAL) 2 x 27 4/250 2 x 225 I 31-24 1500 0.5/700 37.5 0.2/310 200 0 200 5/310 25 10/700 1000 200 5/310 37.5 (SINGLE) 1500 0 ITU-T K.20/K.21 200 5/310 100 (SINGLE) 4000 2 x 225 4/250 2 x 72 (DUAL) 4000 FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator NA = Not Applicable, primary protection removed or not specified. Standard Peak Voltage Setting V Voltage Coordination Resistance (Min.) NA
NA
NA NA NA 4.5 6.0
If the impulse generator current exceeds the protector's current rating, then a series resistance can be used to reduce the current to the protector's rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following calculations. First, the minimum total circuit impedance is found by dividing the impulse generator's peak voltage by the protector's rated current. The impulse generator's fictive impedance (generator's peak voltage divided by peak short circuit current) is then subtracted from the minimum total circuit impedance to give the required value of series resistance. In some cases, the equipment will require verification over a temperature range. By using the rated waveform values from Figure 10, the appropriate series resistor value can be calculated for ambient temperatures in the range of -40 C to 85 C.
MARCH 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP7xxxH3SL Overvoltage Protector Series
APPLICATIONS INFORMATION
AC Power Testing
The protector can withstand the G return currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In some cases, it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases there may be a further time limit imposed by the test standard (e.g. UL 1459 wiring simulator failure).
Capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD , values of 0, -1 V, -2 V and -50 V. Where possible, values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given in Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly dependent on connection inductance. For example, a printed wiring (PW) trace of 10 cm could create a circuit resonance with the device capacitance in the region of 50 MHz. In many applications, the typical conductor bias voltages will be about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V.
Normal System Voltage Levels
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the ring trip circuit. Figure 9 allows the calculation of the protector VDRM value at temperatures below 25 C. The calculated value should not be less than the maximum normal system voltages. The TISP7290H3, with a VDRM of 230 V, can be used for the protection of ring generators producing 105 V rms of ring on a battery voltage of -58 V. The peak ring voltage will be 58 + 1.414*105 = 206.5 V. However, this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. For the extreme case of an unconnected line, the temperature at which clipping begins can be calculated using the data from Figure 9. To possibly clip, the VDRM value has to be 206.5 V. This is a reduction of the 230 V 25 C VDRM value by a factor of 206.5/230 = 0.90. Figure 9 shows that a 0.90 reduction will occur below an ambient temperature of -40 C. For this example, the TISP7290H3 will allow normal equipment operation, even on an open-circuit line, down to below -40 C.
JESD51 Thermal Measurement Method
To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for packages smaller than 27 mm (1.06 '') on a side and the other for packages up to 48 mm (189 ''). The thermal measurements used the smaller 76.2 mm x 114.3 mm (3.0 '' x 4.5 '') PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than indicated by the JESD51 values.
MARCH 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP7xxxH3SL Overvoltage Protector Series
Typical Circuits
TIP WIRE
F1a Th3 Th1 Th2 F1b
R1a PROTECTED EQUIPMENT E.G. LINE CARD R1b TISP7xxxH3
RING WIRE
AI7XBK
Figure 12. Protection Module
R1a Th3 Th1 Th2 R1b TISP7150H3 D.C. SIGNAL
AI7XBL
Figure 13. ISDN Protection
OVERCURRENT PROTECTION TIP WIRE R1a COORDINATION RESISTANCE R1b
RING/TEST PROTECTION
TEST RELAY
RING RELAY
SLIC RELAY S3a
SLIC PROTECTION
Th4
Th3 Th1 Th2
S1a
S2a SLIC
Th5 S3b S1b S2b
RING WIRE
TISP7xxxH3
TISP6xxxx, TISPPBLx, 1/2TISP6NTP2 C1 220 nF VBAT
TEST EQUIPMENT
RING GENERATOR
AI7XBJ
Figure 14. Line Card Ring/Test Protection
MARCH 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP7xxxH3SL Overvoltage Protector Series
MECHANICAL DATA
SL003 3-pin Plastic Single-in-line Package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SL003
9.25 - 9.75 (0.364 - 0.384) DIMENSIONS ARE: METRIC (INCHES)
3.20 - 3.40 (0.126 - 0.134)
Index Notch
8.31 (0.327) MAX. 12.9 (0.492) MAX.
6.10 - 6.60 (0.240- 0.260)
4.267 (0.168) MIN.
1
2
3
2.54 Typical (0.100) (See Note A) 2 Places 0.203 - 0.356 (0.008- 0.014)
1.854 (0.073) MAX. 0.559 - 0.711 (0.022 - 0.028) 3 Places
MDXXCE
NOTES: A. Each pin centerline is located within 0.25 (0.010) of its true longitudinal position. B. Body molding flash of up to 0.15 (0.006) may occur in the package lead plane.
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries.
MARCH 1999 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.

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